ccd area image sensor 1 publication date: december 2002 smd00015aec MW39640AE diagonal 11 mm (type-2/3) it ccd area image sensor overview the MW39640AE is a type-2/3 600k-pixel ccd solid state image sensor. this device uses photodiodes in the opto-electric con- version section and ccds for signal read-out. the elec- tronic shutter function allows for an exposure time of 1/10 000 seconds. further, it features high sensitivity, low noise, broad dynamic range and low smear level. the device has a total of 595 728 pixels (1 008 horizontal 591 vertical) and provides stable and clear images with a resolution of 700 horizontal and 420 vertical tv lines. part number ccd size system color or b/w MW39640AE 11 mm (type-2/3) ccir b/w features ? effective pixel number: 954 (horizontal) 585 (verti- cal) ? high sensitivity ? high resolution ? low smear level ? continuously variable-speed electronic shutter function applications ? three-chip ccd color video camera supporting a widescreen-tv (top view) 1 2 3 4 5 6 7 8 20 19 18 17 16 15 14 13 od rg rd vo lg h2 h1 og 9 10 12 11 gnd pw v7 v8 v1 v2 v3 v4 v5 sub pt v6 ob section pin assignments
MW39640AE 2 smd00015aec device configuration ? element construction 936 9 31 008 1 952 11 575 2 2 5 5 4 1 vertical dummy bit (without pd) ob shading part pd area effective pixels shading part vertical dummy bit horizontal dummy bit horizontal dummy bit effective horizontal hccd transient area parameter value unit horizontal drive frequency f ck = 1 152 f h = 18.0 mhz total pixel number 1 008 (h) 591 (v) pixel effective pixel number (including transient ones) 954 (h) 585 (v) pixel effective pixel number 936 (h) 575 (v) pixel pixel size 10.2 (h) 9.4 (v) m 2 effective image sensor size 9.547 2 (h) 5.405 (v) mm 2 aspect ratio 16 : 9.058 h : v aspect ratio error 0.64 % pin no. symbol description 11 v6 vertical shift register clock pulse 6 12 pt p-well for protection circuit 13 sub substrate 14 v5 vertical shift register clock pulse 5 15 v4 vertical shift register clock pulse 4 16 v3 vertical shift register clock pulse 3 17 v2 vertical shift register clock pulse 2 18 v1 vertical shift register clock pulse 1 19 v8 vertical shift register clock pulse 8 20 v7 vertical shift register clock pulse 7 pin no. symbol description 1 rg reset gate 2 rd reset drain 3 od output drain 4 vo video output 5 lg output load transistor gate 6 h2 horizontal shift register clock pulse 2 7 h1 horizontal shift register clock pulse 1 8 og output gate 9 gnd p-well 10 pw p-well pin descriptions
MW39640AE 3 smd00015aec parameter absolute maximum rating operating condition unit lower limit upper limit min typ max rg high 0 9 4.7 5.0 5.3 v low 0 ? 6.7 7.0 7.3 v rd 0 18 15.7 16.0 16.3 v od 0 18 15.7 16.0 16.3 v vo ????? v lg 0 5 2.7 3.0 3.3 v h2 high ? 10 4.7 5.0 5.3 v low 0 ? 0 0 0.3 v h1 high ? 10 4.7 5.0 5.3 v low 0 ? 0 0 0.3 v og 0 5 0.3 0.5 1.0 v gnd reference voltage ? 0 ? v pw reference voltage ? 0 ? v v6 middle ? 5 ? 0.3 0 0.3 v low ? 12 ?? 9.3 ? 9.0 ? 8.7 v pt ? 13.2 vl vl ? 1.2 vl ? 1.0 vl ? 0.7 v sub 1 * 0 18 5.0 adj. 14.5 v sub 2 * 0 45 24.5 25 + sub 1 40.0 v v5 high ? 18 15.7 16.0 16.3 v middle ? 5 ? 0.3 0 0.3 v low ? 12 ?? 9.3 ? 9.0 ? 8.7 v v4 middle ? 5 ? 0.3 0 0.3 v low ? 12 ?? 9.3 ? 9.0 ? 8.7 v v3 middle ? 5 ? 0.3 0 0.3 v low ? 12 ?? 9.3 ? 9.0 ? 8.7 v v2 middle ? 5 ? 0.3 0 0.3 v low ? 12 ?? 9.3 ? 9.0 ? 8.7 v v1 high ? 18 15.7 16.0 16.3 v middle ? 5 ? 0.3 0 0.3 v low ? 12 ?? 9.3 ? 9.0 ? 8.7 v v8 middle ? 5 ? 0.3 0 0.3 v low ? 12 ?? 9.3 ? 9.0 ? 8.7 v v7 middle ? 5 ? 0.3 0 0.3 v low ? 12 ?? 9.3 ? 9.0 ? 8.7 v operating temperature ? 10 60 ? 25 ? c storage temperature ? 30 70 ??? c absolute maximum ratings and operating conditions
MW39640AE 4 smd00015aec absolute maximum ratings and operating conditions (continued) note) ? : sub pulse at the electronic shutter sub 2 sub 1 0 v image sensor characteristics parameter conditions min typ max unit remarks s/n 25 c, dark condition 63 64.5 ? db standard output saturation output 25 c, f value adjust 1 500 ?? mv at ccd out standard output 25c, j chart standard light 560 620 ? mv at ccd out intensity image lag 25c, 1/10 light intensity ? 0 ? % able to be swept out directly to substrate vertical smear 25 c, 1/10 v, f1.4 ?? 130 ? 120 db standard output transfer efficiency 25 c, f11 + 1/32nd resolution should not be reduced electronic shutter 25 c, specified driving no abnormality within 1/100 to 1/2 000 seconds note) 1. the substrate voltage (sub 1) should be adjusted to the minimum voltage that would not cause blooming, overflow and injection at image sensor of light input of 12 800 times the standard light intensity. 2. the standard light intensity is the one when the exposure is done at an aperture of f/11 using a light source of 2 856k and 920 nt and placing a color temperature conversion filter lb-40 (hoya) and an ir cutting filter caw-500s (t = 2.5 mm) in the light path.
MW39640AE 5 smd00015aec package dimensions (unit: mm) ? wdip020-g-0600d (lead-free package) 25.40 0.25 13.90 0.20 15.10 0.25 110 20 11 0.25 m 19.20 0.20 18.90 0.05 0.46 0.05 1.27 3.32 0.25 3.22 0.25 4.40 0.30 1.02 2.27 0.89 0.25 7.53 0.30 0.00 20.80 -0.40 +0.40 7.00 0.00 +0.05 0.25 - 0.03 12.49 0.30 r1.15 index mark a c b d 2.30 0.25 2.54 15.24 0.25 tolerance: 0.20 unless otherwise specified 1. the package center does not meet the center of the effective pixel area. a is the center of the effective pixel area. 2. the reference of a vertical direction(v) is the side b. the reference of a horizontal direction(h) is the side c. the reference of a height direction is the package bottom d. 3. the rotation precision of the effective pixel area: maximum 1.5 4. the distance from the package bottom d to the effective pixel area : 1.65 mm 0.3 mm 5. the tilt of the effective pixel area toward the package bottom d : up to 60 m (d' = d o max. 0.03 mm) 6. the thickness of the seal glass: 0.8 mm 0.1 mm, and the refractive index: 1.50 chip rotation: 1.5 max. anti-flare plate sus 0.1t double side anti-reflection film coated glass t = 0.8 0.05 chip center d o = 1.65 0.30 chip peripheral d' = d o 0.03 on-chip lens
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